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1 CG2H30070F 70 w, 0.53.0 ghz, 28 v, rf power gan hemt crees CG2H30070F is an internally matched gallium nitride (gan) high electron mobility transistor (hemt). the CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of rf and microwave applications. gan hemts offer high effciency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and compressed amplifer circuits. the transistor is available in a fange package. re v 1.3 - decembe r 2017 package type: 440224 pn: CG2H30070F typical performance over 0.5 - 3.0 ghz (t c = 25?c) parameter 500 mhz 1000 mhz 1500 mhz 2000 mhz 2500 mhz 3000 mhz units small signal gain (s21) 16.7 15.3 17.3 15 16.3 14.8 db gain @ p in = 39 dbm 10.3 10.4 10.6 9.8 11.4 10.5 db output power @ p in = 39 dbm 85 88 90 76 109 89 w effciency @ p in = 39 dbm 63 57.5 55.6 63.4 62.1 59.8 % note: operating conditions are cw features ? 0.5 - 3.0 ghz operation ? 85 w p out typical at 28 v ? 10 db power gain ? 58 % drain effciency ? internally matched applications ? broadband amplifers ? electronic counter measures ? signal jamming ? milcom ? radar ? data link subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 120 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 28.8 ma 25?c maximum drain current 1 i dmax 12 a 25?c soldering temperature 2 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case 3 r jc 1.5 ?c/w 85?c, cw, p diss = 106 w case operating temperature 2 t c -40, +150 ?c note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 see also, the power dissipation de-rating curve on page 8. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -2.8 -2.3 v dc v ds = 10 v, i d = 28.8 ma saturated drain current 2 i ds 23 28.8 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 28.8 ma rf characteristics 3 (t c = 25 ? c, f 0 = 3000 mhz unless otherwise noted) small signal gain g ss C 17.7 C db v dd = 28 v, i dq = 1.0 a, p in = 0 dbm, cw power gain g p C 12 C db v dd = 28 v, i dq = 1.0 a, p in = 39 dbm, cw output power p out C 50 C dbm v dd = 28 v, i dq = 1.0 a, p in = 39 dbm, cw drain effciency 4 C 70 C v dd = 28 v, i dq = 1.0 a, p in = 39 dbm, cw output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 1.0 a, p out = 100 w cw dynamic characteristics input capacitance c gs C 68.1 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 11.3 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 1.49 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging per side of device. 2 scaled from pcm data. 3 measurements are to be performed using cree production test fxture ad-838279f-tb (flange) 4 drain effciency = p out / p dc 5 capacitance values are for each side of the device. cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 CG2H30070F typical performance figure 1 - small signal gain and return losses of the CG2H30070F vs frequency as measured in the single-ended demonstration amplifer CG2H30070F-amp v dd = 28 v, i dq = 1.0 a figure 2 - output power and effciency of the CG2H30070F vs. frequency as measured in the single-ended demonstration amplifer CG2H30070F-amp cw operation, v dd = 28 v, i dq = 1.0 a, p in = 39 dbm cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 CG2H30070F typical performance figure 3 - gain and drain effciency vs. output power at various frequencies as measured in the single-ended demonstration amplifer CG2H30070F-amp cw-operation, v dd = 28 v, i dq = 1.0 a figure 4 - simulated maximum available gain and k-factor of the CG2H30070F v dd = 28 v, i dq = 1.0 a cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 CG2H30070F typical performance figure 5 - im3 vs. output power of the CG2H30070F as measured in the single-ended demonstration amplifer CG2H30070F-amp i dq =300 ma, temperature = 25c figure 6 - im3 vs. output power of the CG2H30070F as measured in the single-ended demonstration amplifer CG2H30070F-amp i dq = 1000 ma, temperature = 25c cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 CG2H30070F typical performance figure 7 - im3 vs. frequency of the CG2H30070F as measured in the single-ended demonstration amplifer CG2H30070F-amp p out = 40 dbm, temperature = 25c cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 simulated source and load impedances frequency (mhz) z source z load 500 9 - j5.15 5.79 - j2.56 1000 7.45 - j3.82 4.76 - j1.35 1500 1.7 - j3.24 3.55 + j0.8 2000 2.33 - j0.06 4.19 + j0.19 2500 4.57 - j2.15 4.34 - j1.73 3000 1.07 - j1.04 2.65 - j1.57 note 1. v dd = 28 v, i dq = 1.0 a in the 440224 package. note 2. optimized for power gain, p sat and drain effciency. note 3. when using this device at low frequency, series resistors should be used to maintain amplifer stability. CG2H30070F power dissipation de-rating curve, cw note 1. area exceeds maximum case operating temperature (see page 2). d z source z load g s 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum case temperature ( c) cg2h30070 power dissipation de-rating curve note 1. cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 typical combined performance the previous plots were created from one side of the wideband applica - tion circuit, CG2H30070F-amp2 in order to demonstrate the rf performance of the transistor over a wide frequency band. the application circuit CG2H30070F- amp2 is designed to combine two CG2H30070F in order to achieve 100w cw from 0.5-3.0 ghz instantaneously. figure 7 shows the typical rf performance from CG2H30070F-amp2. to achieve this performance, couplers from innovative power products were used. the ipp-2256 uses n-type connectors in order to handle the higher out - put power from this application circuit and lead to the reason for the spacing seen in the sma connectors in the application amplifer CG2H30070F-amp2. figure 7 - output power, power gain and drain effciency vs. frequency of two CG2H30070F combined as measured in the combined demonstration amplifer CG2H30070F-amp2 with couplers v dd = 28 v, i dq = 2 a, p in = 42.5 dbmtemperature = 25c 0 6 12 18 24 30 36 42 48 54 60 66 72 45 46 47 48 49 50 51 52 53 54 55 56 57 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 g a i n (d b ), d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) frequency (ghz) 2-CG2H30070F: combined, cw pin=42.5dbm cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 CG2H30070F-amp2 demonstration amplifer circuit schematic CG2H30070F-amp2 demonstration amplifer circuit outline j1 j2 j4 j5 j3 c1 c2 c3 c7 c6 r1 r3 r2 r4 c4 c5 c8 c13 c14 c9 c10 c11 c12 c15 j6 r5 r6 r7 c16 c17 c18 c20 c19 r8 c21 c22 c23 c24 c25 c26 c27 c28 c29 c30 c32 c31 c34 c33 cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 CG2H30070F-amp2 demonstration amplifer circuit bill of materials designator description qty c11, c26 cap, 39 pf, 5%, 250v, 0805, atc600f 2 c8, c23 cap, 22 pf, 5%, 250v, 0805, atc600f 2 c3, c18 cap, 39 pf, 5%, 0603, atc 2 c14, c29 cap, 33000pf, 0805, 100v, x7r 2 c15, c30 cap, 10uf, 16v tantalum 2 c13, c9, c10, c28, c24, c25 cap, 240pf, 5%, 250v, 0805, atc600f 6 c6, c7, c31, c32, c21, c22, c33, c34 cap, 0.2pf, 0.05%pf, 250v, 0805, atc600f 8 c4, c5, c19, c20 do not place 0 c1, c2, c16, c17 cap, 3.9pf, 0.1pf, 0603, atc 4 r2, r3, r6, r7 res, 7 ohm, 0805, high power smt, ims 4 r1, r5 res, 175 ohm, 0805, high power smt, ims 2 r4, r8 res, 5 ohm, 0603, smt 2 c12, c27 cap, 33 uf, 20%, 100v, elec 2 j1, j2, j4, j5 conn, sma, panel mount jack, flange, 4-hole, blunt post, 20 mil 4 j3, j6 header rt>plz .1cen lk 9pos 2 pcb, ro6035htc, 3.6x4.8x0.10, CG2H30070F 1 baseplate, ai, 4.8x3.6x0.5 CG2H30070F-amp2 demonstration amplifer circuit cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 product dimensions CG2H30070F (package type 440224) cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 product ordering information order number description unit of measure image CG2H30070F gan hemt each CG2H30070F-tb2 test board without gan hemt each CG2H30070F-amp2 test board with gan hemt installed each cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
13 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cg2h30070 rev 1.3 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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